型号:

SP8K1TB

RoHS:无铅 / 符合
制造商:Rohm Semiconductor描述:MOSFET 2N-CH 30V 5A 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
SP8K1TB PDF
产品目录绘图 RRS, RSS Series 8-SOP, 8-SOIC
特色产品 ECOMOS? Series MOSFETs
标准包装 1
系列 -
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 5A
开态Rds(最大)@ Id, Vgs @ 25° C 51 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 1mA
闸电荷(Qg) @ Vgs 5.5nC @ 5V
输入电容 (Ciss) @ Vds 230pF @ 10V
功率 - 最大 2W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 标准包装
产品目录页面 1638 (CN2011-ZH PDF)
其它名称 SP8K1TBDKR
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